. Electronic Components Datasheets 2sd313 free download

File name 2sd313.pdf

2SD313(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR 3. EMITTER 3 2 Features 1 Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.75 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 100 A Collector cut-off current ICEO VCE=60V, IE=0 1 mA Emitter cut-off current IEBO VEB=4V, IC=0 100 A hFE(1) VCE=2V, IC=1A 40 320 DC current gain hFE(2) VCE=2V, IC=0.1A 40 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V Transition frequency